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| Broadband Monolithic Silicon PIN Diode Switches Rev 2.0 Features * Broad Bandwidth Specified from 50MHz to 20GHz Usable from 50MHz to 26.5GHz * Lower Insertion Loss / Higher Isolation than pHempt * Rugged, Fully Monolithic, Glass Encapsulated Construction * Up to +33dBm C.W. Power Handling @ + 25C MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 MASW-001100-1190 Description The MASW-001100, MASW-002100 and MASW-003100 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as moderate signal, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beam lead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM's patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20 AuSn solder or conductive Ag epoxy. MASW-002100-1191 MASW-003100-1192 Absolute Maximum Ratings @ +25C Parameter Operating Temperature Storage Temperature Junction Temperature Applied Reverse Voltage RF C.W. Incident Power Bias Current +25C Absolute Maximum -65oC to +125oC -65oC to +150oC +175oC | - 50V | +33dBm C.W. 20mA Specification Subject to Change Without Notice M/A-COM, Inc. _____________________________________________________________________________________ North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 1 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 MASW-001100-1190 (SPST) Electrical Specifications @ TA = +25oC, 20mA Bias Current Parameter Frequency Minimum Insertion Loss 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 46 39 34 22 15 14 - Rev 2.0 Nominal 0.4 0.5 0.7 55 47 42 31 33 27 20 0.2 Maximum 0.7 0.9 1.2 50 - Units dB dB dB dB dB dB dB dB dB ns V dB Isolation Input Return Loss Switching Speed 2 Voltage Rating Signal Compression (500mW) 1 MASW-002100-1191 (SPDT) Electrical Specifications @ TA = +25oC, 20mA Bias Current Parameter Frequency Minimum Insertion Loss 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 48 40 34 20 18 15 - Nominal 0.4 0.5 0.7 63 50 42 27 25 25 20 0.2 Maximum 0.7 1.0 1.2 50 - Units dB dB dB dB dB dB dB dB dB ns V dB Isolation Input Return Loss Switching Speed 2 Voltage Rating Signal Compression (500mW) 1 MASW-003100-1192 (SP3T) Electrical Specifications @ TA = +25oC, 20mA Bias Current Parameter Frequency Minimum Insertion Loss 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 6GHz 13GHz 20GHz 1GHz 49 42 33 20 14 11 - Nominal 0.5 0.7 0.9 57 48 42 24 22 21 20 0.2 Maximum 0.8 1.1 1.5 50 - Isolation Input Return Loss Switching Speed 2 Voltage Rating Signal Compression (500mW) 1 Units dB dB dB dB dB dB dB dB dB ns V dB 1.) Typical Switching Speed measured from 10 % to 90 % of detected RF signal driven by TTL compatible drivers. 2.) Maximum reverse leakage current in either the shunt or series PIN diodes shall be 10A maximum at -50 volts. Specification Subject to Change Without Notice 2 ______________________________________________________________________________ M/A-COM, Inc. Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 Typical Performance Curves @ TA = +25C, 20mA Bias Current MASW-001100-1190 RETURN LOSS vs. FREQUENCY -10 -15 Rev 2.0 MASW-001100-1190 INSERTION LOSS vs. FREQUENCY -0.2 Output Return Loss -20 -25 -30 -35 0 5 10 15 20 25 30 INSERTION LOSS (dB) RETURN LOSS (dB) -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0 5 10 15 20 25 30 Input Return Loss FREQUENCY (GHz) FREQUENCY (GHz) MASW-002100-1191 RETURN LOSS vs. FREQUENCY -10 -0.2 MASW-002100-1191 INSERTION LOSS vs. FREQUENCY INSERTION LOSS (dB) 25 30 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 0 5 10 15 20 25 30 RETURN LOSS (dB) -15 Output Return Loss -20 -25 -30 -35 0 5 10 15 20 Input Return Loss FREQUENCY (GHz) FREQUENCY (GHz) MASW-003100-1192 RETURN LOSS vs. FREQUENCY -10 -0.3 MASW-003100-1192 INSERTION LOSS vs. FREQUENCY INSERTION LOSS (dB) 30 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1 -1.1 -1.2 0 5 10 15 20 25 30 RETURN LOSS (dB) -15 Output Return Loss -20 -25 Input Return Loss -30 0 5 10 15 20 25 FREQUENCY (GHz) FREQUENCY (GHz) S-Parameters: S-Parameter data for these devices are available upon request. Specification Subject to Change Without Notice M/A-COM, Inc. _______________________________________________________________________________ North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 3 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 Typical Performance Curves @ TA = +25C, 20mA Bias Current INPUT RETURN LOSS (dB) Rev 2.0 MASW-001100-1190 ISOLATION vs. FREQUENCY -35 -40 INPUT RETURN LOSS vs. BIAS CURRENT @ 10 GHz -22 -24 -26 -28 -30 -32 -34 0 5 10 15 20 25 30 35 40 45 50 55 M ASW-001100 M ASW-003100 ISOLATION (dB) -45 -50 -55 -60 -65 -70 -75 -80 0 5 10 15 20 25 30 M ASW-002100 CURRENT (mA) FREQUENCY (GHz) OUTPUT RETURN LOSS vs. BIAS CURRENT@ 10 GHz OUTPUT RETURN LOSS (dB) -21.5 -22 -22.5 -23 -23.5 M ASW-001100 MASW-003100-1192 ISOLATION vs. FREQUENCY -35 -40 -45 -50 -55 -60 -65 -70 -75 -80 0 5 10 15 20 25 30 ISOLATION (dB) -24 -24.5 -25 -25.5 0 5 10 15 20 25 30 35 40 45 50 55 M ASW-003100 M ASW-002100 CURRENT (mA) INSERTION LOSS vs. BIAS CURRENT @ 10 GHz INSERTION LOSS (dB) FREQUENCY (GHz) -0.35 -0.4 -0.45 -0.5 -0.55 -0.6 -0.65 -0.7 0 5 10 15 20 25 30 35 40 45 50 55 M ASW-003100 M ASW-002100 M ASW-001100 MASW-002100-1191 ISOLATION vs. FREQUENCY -35 -40 ISOLATION (dB) -45 -50 -55 -60 -65 -70 -75 -80 CURRENT (mA) ISOLATION vs. BIAS CURRENT @ 10 GHz -46 -47 ISOLATION (dB) 0 5 10 15 20 25 30 FREQUENCY (GHz) -48 -49 -50 -51 -52 -53 -54 0 5 10 15 20 25 30 35 40 45 50 55 M ASW-002100 M ASW-003100 M ASW-001100 CUR R ENT (m A) Specification Subject to Change Without Notice 4 ______________________________________________________________________________ M/A-COM, Inc. Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 Operation of the MASW Series Switches Operation of the MASW series of PIN Switches is achieved by simultaneous application of negative DC current to the low loss switching arm J1, J2, or J3, and positive DC current to the remaining switching arms as shown in the Bias Connection circuits. DC return is achieved via J1. The control currents should be supplied by constant current sources. The voltages at these points will not exceed +1.5 volts (1.2 volts typical) at currents up to + 20mA. In the Low Loss state, the series diode must be forward biased and the shunt diode reverse biased. In the isolated arm, the shunt diode is forward biased and the series diode is reverse biased. Rev 2.0 MASW-001100-1190 and Bias Connections1 J1 R F IN P U T 20pF 20nH J 2 B IA S 20pF 100 20nH 20pF 20pF S w it c h C h ip J2 RF OUTPUT Driver Connections MASW-001100-1190 Control Level (DC Current) at J2 -20 mA +20 mA MASW-002100-1191 and Bias Connections1 Condition of RF Output J1-J2 Low Loss Isolation 20nH 20pF 20pF J3 RF OUTP UT 100 20pF 20nH 20pF J3 BIAS J1 RF INPUT 20pF 20nH J2 BIAS MASW-002100-1191 Control Level (DC Current) at J2 -20 mA +20 mA J3 +20 mA -20 mA Condition of RF Output J1-J2 Low Loss Isolation Condition of RF Output J1-J3 Isolation Low Loss Switch Chip 20pF J2 RF OUTPUT MASW-003100-1192 and Bias Connections J1 RF INPUT 20pF 1 MASW-003100-1192 Control Level (DC Current) at Condition of RF Output J1-J2 Conditio n of RF Output J1-J3 Condition of RF Output J1-J4 J4 BIAS 20nH J2 BIAS 20pF 20nH 20pF J2 J3 J4 100 20nH 20pF -20 mA +20 mA +20 mA +20 mA -20 mA +20 mA +20 mA +20 mA -20 mA Low Loss Isolation Isolation Isolation Low Loss Isolation Isolation Isolation Low Loss 20pF J4 RF OUTPUT 20pF J2 RF OUTPUT Handling Considerations Cleanliness: These chips should be handled in a clean environment. Do not attempt to clean chips after installation. Electro-Static Sensitivity: The MASW Series PIN switches are ESD, Class 1A sensitive (HBM). The proper ESD handling procedures should be used. 20nH 20pF J3 RF OUTPUT J3 BIAS 20pF Notes: 1. RLC values are for a typical operating frequency of 2 - 18GHz and Bias Current of 20mA per diode. Specification Subject to Change Without Notice M/A-COM, Inc. _______________________________________________________________________________ North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 5 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 Wire Bonding Rev 2.0 Thermosonic wedge wire bonding using 0.003" x 0.00025" ribbon or 0.001" diameter gold wire is recommended. A stage temperature of 150oC and a force of 18 to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required to achieve a good bond. RF bond wires should be kept as short as possible. Mounting The HMIC switches have TiPtAu back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive epoxy. Mounting surface must be clean and flat. Eutectic Die Attachment: An 80/20 gold-tin eutectic solder preform is recommended with a work surface temperature of 255oC and a tool tip temperature of 265oC. When hot gas is applied, the tool tip temperature should be 290oC. The chip should not be exposed to temperatures greater than 320oC for more than 20 seconds. No more than three seconds should be required for attachment. Solders containing tin should not be used. Epoxy Die Attachment: Surface of assembly should be preheated to 125-150oC. A minimum amount of epoxy should be used. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule. Chip Outline Drawings1, 2 MASW-001100-1190 DIM INCHES MIN. MAX. 0.018 0.029 MIN. 0.35 0.64 MM MAX. 0.45 0.74 A B C D E F G H 0.014 0.025 0.008 REF 0.004 0.006 0.20 REF 0.10 0.15 0.004 REF 0.003 REF 0.003 REF 0.020 REF 0.10 REF 0.08 REF 0.08 REF 0.52 REF Notes: 1. Topside metallization is gold 2.5m thick typical. Backside metallization is gold, 1.0m thick typical. 2. Hatched areas indicate wire bonding pads. Specification Subject to Change Without Notice 6 ______________________________________________________________________________ M/A-COM, Inc. Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: Tel. (800) 366-2266 Fax (800) 618-8883 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 Rev 2.0 Chip Outline Drawings1, 2 MASW-002100-1191 DIM INCHES MIN. MAX. 0.033 0.006 MIN. 0.73 0.10 MM MAX. 0.83 0.15 A B C D E F G H 0.029 0.004 0.004 REF 0.005 REF 0.009 REF 0.023 REF 0.007 REF 0.004 REF 0.10 REF 0.13 REF 0.23 REF 0.58 REF 0.17 REF 0.10 REF MASW-003100-1192 DIM INCHES MIN. MAX. 0.050 0.040 MIN. 1.16 0.92 MM MAX. 1.26 1.02 A B C D E F G H J 0.046 0.036 0.019 REF 0.014 REF 0.004 REF 0.005 REF 0.004 0.006 0.48 REF 0.36 REF 0.10 REF 0.13 REF 0.10 0.15 0.005 REF 0.004 REF 0.12 REF 0.10 REF Notes: thick typical. Backside metallization is gold, 1.0m thick typical. 2. Hatched areas indicate wire bonding pads. 1. Topside metallization is gold 2.5m Specification Subject to Change Without Notice M/A-COM, Inc. _______________________________________________________________________________ North America: Tel. (800) 366-2266 Fax (800) 618-8883 Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 7 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 Monolithic Pin Diode Switches MASW-001100-1190, MASW-002100-1191, MASW-003100-1192 Rev 2.0 Ordering Information Part Number MASW-001100-11900W MASW-002100-11910W MASW-003100-11920W Package Waffle Pack Waffle Pack Waffle Pack Specification Subject to Change Without Notice 8 ______________________________________________________________________________ M/A-COM, Inc. Asia/Pacific: Tel. +81 3 3263 8761 Fax +81 3 3263 8769 Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: Tel. (800) 366-2266 Fax (800) 618-8883 |
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